Research: Stress in thin films results from the fact that the atoms are not in their equilibrium position. In polycrystalline thin films the grain boundaries are regions where the atoms are too far apart. The grain boundaries cause tensile stress due to the fact that the position of the grains is fixed with respect to the substrate. Compressive stress is created by an ion bombardment of the growing film: ion- or atom- peening. The resulting stress in the film will be the sum of both effects. Stress is observed from curvature of the silicon wafers on which the film is deposited and from measurement of the lattice spacing in the film by X-ray diffraction.
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