Researchprogram focuses on the basic building blocks of silicon integrated circuits. To answer to the constant demands for higher speed, lower power, higher density, higher efficiency, or new functionality, the device research goes hand in hand with the development of new and more powerful silicon processing techniques. High-performance bipolar and special MOS/junction field-effect transistors. Analogue/microwave circuits. Smart sensors. Integrated circuit processes. Thermal management in silicon-on-glass integrated devices and circuits. Excimer laser annealing for shallow junction formation. Parallel silicon nanowire transistors.
High-frequency, low-noise junction field-effect transistors. Active and passive circuit integration on high-resistivity silicon substrates. Scanning probe with integrated nanocalorimetry. Technologies for microwave diodes.
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